| PART |
Description |
Maker |
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44
256K X 16 UVPROM, 80 ns, CQCC44
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 120 ns, PDIP40
256K X 16 OTPROM, 120 ns, PQCC44
256K X 16 OTPROM, 200 ns, PQCC44
256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| AT27BV400-15TI AT27BV400 AT27BV400-12JC AT27BV400- |
High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 256K X 16 OTPROM, 120 ns, PDSO48
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 256K X 16 OTPROM, 150 ns, PDSO48
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| GS880V37AT-200I GS880V37AT-250 GS880V37AT-250I GS8 |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 3 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| CY7C1034DV33-8BGXC |
6-Mbit (256K X 24) Static RAM 256K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62146ELL-45ZSXA CY62146ELL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位）的动态与江户页面模式内存
|
Integrated Circuit Solu...
Cypress Semiconductor Corp.
Integrated Circuit Solution Inc
|
