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FQI22N30 - TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)

FQI22N30_1066278.PDF Datasheet


Part No.	FQI22N30
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| 21A I(D) \| TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
File Size	729.00K / 9 Page
Maker	Fairchild Semiconductor Corporation
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Full text search : TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)

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Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P	Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor	Infineon Technologies AG
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FS5VSJ06 FS30UMJ06	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 5A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 60V的五（巴西）直\| 30A条（丁）\| TO - 220AB现有	Powerex, Inc.

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