| PART |
Description |
Maker |
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N1 |
12A, 1200V, NPT Series N-Channel IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| ITS18F03B |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 36A I(C) | TO-220AB 晶体管| IGBT的|正陈| 300V五（巴西）国际消费电子展|6A一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IXGH24N60BU1S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| IXGP15N120B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）| TO - 220AB现有
|
Maxim Integrated Products
|
| IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 58A条一（c）|64AA
|
IXYS, Corp.
|
| HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五（巴西）国际消费电子展| 100号A一（c）|米：HL080HD5.3
|
Infineon Technologies AG
|
| FF75R12KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 75A I(C) | M:HL093HD5.6 晶体管| IGBT的|正陈|双| 1.2KV五（巴西）国际消费电子展| 75A条一（c）|米：HL093HD5.6
|
Infineon Technologies AG
|
| GT5J331_SM GT5J311 GT5J331SM GT5J311SM |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-263AB
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
