| PART |
Description |
Maker |
| FM28V100 FM28V100-TG FM28V100-TGTR |
1Mbit Bytewide F-RAM Memory
|
Ramtron International Corporation
|
| FM28V100-TGTR FM28V10010 |
1Mbit Bytewide F-RAM Memory
|
Ramtron International Corp.
http://
Ramtron International Corporation
|
| DS75129J DS75129J/A |
2Mb Bytewide 3V F-RAM Memory
256Kb Bytewide 3V F-RAM Memory 线路接收
|
Samsung Semiconductor Co., Ltd.
|
| FM20L08-60-TG |
1Mbit Bytewide FRAM Memory Extended Temp
|
Electronic Theatre Controls, Inc.
|
| FM28V020 FM28V020-SG FM28V020-SGTR FM28V020-TGTR F |
256Kbit Bytewide F-RAM Memory
|
Ramtron International Corporation
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| FM18W08 FM18W08-SG |
256Kb Wide Voltage Bytewide F-RAM
|
Ramtron International Corporation
|
| PM39LV512-70JCE PM39LV512-70VC PM39LV512-70VCE PM3 |
512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra Inc]
PMC[PMC-Sierra, Inc]
|
| FM18L08 FM18L08-70-P FM18L08-70-S |
.050 X .050 MICRO STRIPS 256Kb.7 - 3.6V的Bytewide FRAM存储
256Kb 2.7-3.6V Bytewide FRAM Memory
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Ramtron International
|
| UN421K UNR421K UN4211 UN4210 UN4212 UN4213 UN4214 |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:45ns; Series:AM29 RoHS Compliant: Yes
Silicon NPN epitaxial planar type 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Composite Device - Transistors with built-in Resistor 复合装置-内置晶体管，电阻
|
PANASONIC CORP
Panasonic, Corp.
|
