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AS7C34096 - 5V/3.3V 512K x 8 CMOS SRAM

AS7C34096_1640306.PDF Datasheet

 
Part No. AS7C34096
Description 5V/3.3V 512K x 8 CMOS SRAM

File Size 110.37K  /  10 Page  

Maker

Alliance Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: AS7C34096-10TC
Maker: ALLIANCE
Pack: TSOP
Stock: Reserved
Unit price for :
    50: $1.48
  100: $1.40
1000: $1.33

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 Full text search : 5V/3.3V 512K x 8 CMOS SRAM
 Product Description search : 5V/3.3V 512K x 8 CMOS SRAM


 Related Part Number
PART Description Maker
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
Atmel Corp.
Atmel, Corp.
WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP 512K x 8 SRAM, 15ns
512K x 8 SRAM, 17ns
512K x 8 SRAM, 20ns
512K x 8 SRAM, 25ns
White Electronic Designs
UPD444008 UPD444008LE-12 UPD444008LE-10 UPD444008L 512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
NEC Corp.
AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 512K x 8 SRAM SRAM MEMORY ARRAY
512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 12 ns, CDIP32
512K X 8 STANDARD SRAM, 25 ns, CQCC32
512K X 8 STANDARD SRAM, CDSO32
512K X 8 STANDARD SRAM, 15 ns, CDSO32
512K X 8 STANDARD SRAM, 12 ns, CDFP32
Austin Semiconductor, Inc
Micross Components
AUSTIN SEMICONDUCTOR INC
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 256K X 36 ZBT SRAM, 3.2 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor Corp.
Crystek, Corp.
AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A 512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
SAMSUNG[Samsung semiconductor]
Samsung Electronic
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM 512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
AS5SP512K18DQ AS5SP512K18DQ-30ET AS5SP512K18DQ-30I 512K X 18 CACHE SRAM, 4 ns, PQFP100
Plastic Encapsulated Microcircuit 9Mb, 512K x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
MICROSS COMPONENTS
Austin Semiconductor
 
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