PART |
Description |
Maker |
MAX3537UTC |
Broadband Variable-Gain Amplifiers
|
MAXIM - Dallas Semiconductor
|
AD600-15 |
Dual, Low Noise, Wideband Variable Gain Amplifiers
|
Analog Devices
|
ADRF6510 ADRF6510-EVALZ ADRF6510ACPZ-R7 ADRF6510AC |
30 MHz Dual Programmable Filters and Variable Gain Amplifiers
|
http:// Analog Devices
|
AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http:// Analog Devices, Inc. ANALOG DEVICES INC
|
EL4452 EL4452CN EL4452CS |
Wideband Variable-Gain Amplifier with Gain of 10
|
Intersil Corporation
|
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers NPN Silicon RF Transistor
|
Infineon Technologies AG
|
AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
BFR193 Q62702-F1218 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
CGY121B Q62702-G0071 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
CHA2294-99F_00 CHA2294 CHA2294-99F/00 |
35-40GHz Low Noise, Variable Gain Amplifier 35-40GHz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声,可变增益放大器
|
United Monolithic Semic... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
|