| PART |
Description |
Maker |
| KM48C512A KM48C512AL |
512K x 8-Bit CMOS DRAM
|
Samsung Electronics
|
| KM48C512 |
512K x 8-Bit CMOS DRAM
|
Samsung Electronics
|
| KM48V514D KM48C514D |
512K x 8-Bit CMOS DRAM
|
Samsung Electronics
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| CAT28F512 CAT28F512TRI-12T CAT28F512TRI-15T CAT28F |
120ns 512K-bit CMOS flash memory
90ns 512K-bit CMOS flash memory
150ns 512K-bit CMOS flash memory
512K-Bit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MX26LV800BXBC-70G MX26LV800TXBC-70G MX26LV800BXBC- |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A- |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| HY57V161610DTC-6I |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| HY67V161610D HY67V161610DTC HY67V161610DTC-10 HY67 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
| A43L0616BV A43L0616B A43L0616BV-6 A43L0616BV-6F A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
