| PART |
Description |
Maker |
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
|
| TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
| 5202CS12Z 5202CS21 |
5 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| TSHA5200 TSHA520009 TSHA5201 TSHA5202 TSHA5203 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| AV-875 |
AV-875 SPST N.O.,60 Amps, 270 VDC
|
Tyco Electronics
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA520008 TSHA5203 TSHA5201 TSHA5202 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| 1300970158 SD-130097-004 36248 |
Deluxe Cord Grips Strain Relief, 3/4 NPT, Straight Female, Cable Diameter 19.05-22.23mm (.750-.875)
MOLEX Connector
|
Molex Electronics Ltd.
|
| 1301800311 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
| 1301800310 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
|
