| PART |
Description |
Maker |
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36W0R6050T1 |
64 Mbit Flash Memory and 32 Mbit PSRAM Multi-Chip Package
|
STMicroelectronics
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36W0R6050T1ZAQE |
64 Mbit (4 Mb 16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 16) PSRAM, multi-chip package
|
意法半导
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| AT52BC1661A-70CI AT52BC1661AT-70CI |
16-Mbit Flash 8-Mbit PSRAM Stack Memory 16 - Mbit闪存8兆移动存储芯片堆栈内
|
Atmel Corp.
Atmel, Corp.
|
| AT52BC1661A AT52BC1661AT-70CI AT52BC1661A-70CI AT5 |
16-Mbit Flash 8-Mbit PSRAM Stack Memory
|
ATMEL[ATMEL Corporation]
|
| M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
