| PART |
Description |
Maker |
| TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| DT28F320S5-90 DT28F320S5-110 DT28F160S5-70 DT28F16 |
Word-wide FlashFile memory. 32 Mbit, access speed 90 ns
Word-wide FlashFile memory. 32 Mbit, access speed 110 ns
Word-wide FlashFile memory. 16 Mbit, access speed 70 ns
Word-wide FlashFile memory. 16 Mbit, access speed 100 ns
|
Intel
|
| MS28F016SA VS28F016SA |
16-Mbit (2 Mbit x 8) FlashFile Memory(16-M2 Mx 8) FlashFile 存储
16-Mbit (1 Mbit x 16) FlashFile Memory(16-M1 Mx 16) FlashFile 存储 16兆位兆位× 16FlashFile内存6米位米位× 16FlashFile存储器）
|
Intel Corp.
Intel, Corp.
|
| 28F160S3 |
3 V FlashFile Memory(3 V FlashFile 存储
|
Intel Corp.
|
| LTC1599BCGTR |
16-Bit Byte Wide, Low Glitch Multiplying DAC with 4-Quadrant Resistors
|
Linear Technology
|
| DT28F016SA-100 E28F016SA-080 E28F016SA-150 DA28F01 |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY 1M X 16 FLASH 12V PROM, 70 ns, PDSO56
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY 1M X 16 FLASH 12V PROM, 80 ns, PDSO56
28F016SA 16-MBIT (1 MBIT X 16/ 2 MBIT X 8)FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
| WM2613 WM2613IDT WM2613CDT |
BYTE-WIDE PARALLEL INPUT, 12-BIT VOLTAGE OUTPUT DAC
From old datasheet system
|
WOLFSON[Wolfson Microelectronics plc]
|
| LC87F40C8A |
Internal 128K-byte FROM (ROM/CGROM), 2048 byte RAM, 1024-byte CGRAM, and 704×10-bit CRT Display RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| AD9814 |
Low Power 14-Bit, 3-Channel CCD Signal Processor with Progammable Serial Interface and Byte-Wide Data Output Format
|
AD
|
| P89LPC980FDH P89LPC980 P89LPC982 P89LPC982FA P89LP |
8-bit microcontroller with accelerated two-clock 80C51 core, 4 kB/8 kB wide-voltage byte-erasable flash with 10-bit ADC
|
NXP Semiconductors
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
