| PART |
Description |
Maker |
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| 2SK2356 2SK2356-Z 2SK2355-Z 2SK2355 2SK2356-Z-E1 |
N-channel enhancement type DMOS
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
NEC Corp.
|
| 2SJ327-Z-E1 |
P-channel enhancement type
|
NEC
|
| UPA1723G-E1 UPA1723G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1725G-E1 UPA1725G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1871 UPA1871GR-9JG |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
NEC Corp.
|
| UPA620TT UPA620TT-E1 UPA620TT-E2 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| 2SK1818-MR 2SK1818 |
N-CHANNEL ENHANCEMENT TYPE MOSFET 20 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| UPA2502 UPA2502TM UPA2502TM-E2 |
N-ch enhancement-type MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| ZVN3310F ZVP3310F ZVP3310FTA ZVP3310F-15 |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
