| PART |
Description |
Maker |
| AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| MN1203 |
256-bit CMOS static RAM
|
Panasonic Semiconductor
|
| CAT22C10J-30-TE13 CAT22C10L-20-TE13 CAT22C10LA-30- |
Nonvolatile CMOS Static RAM, 256 bit
256-Bit Nonvolatile CMOS Static RAM
|
CATALYST[Catalyst Semiconductor]
http://
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter
RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
