PART |
Description |
Maker |
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
|
DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY 16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 150 x 32 pixel format, LED Backlight available ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M25P40-VMN M25P40-VMN6T M25P40-VMW6T -M25P40-VMN6T |
4 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪
|
意法半导 STMicroelectronics N.V.
|
M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V. 意法半导
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|
M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8,启动座单电源闪 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8,启动座单电源闪 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8,启动座单电源闪
|
ST Microelectronics 意法半导 STMicroelectronics N.V.
|
E28F004S5-85 E28F004S5-120 28F016S5 28F008S5 E28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT 12V/5V Input Buck PWM Controller Evaluation Kit/Evaluation System for the MAX5946A, MAX5946L BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 85 ns, PDSO44 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 100 ns, PDSO44 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 100 ns, PDSO44 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 120 ns, PDSO44
|
Intel Corporation Intel Corp. Intel, Corp.
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V http://
|
SST25LF020A10 SST25LF020A-33-4C-QAE SST25LF020A-33 |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 3V PROM, PDSO8 2 Mbit SPI Serial Flash
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. Microchip Technology, Inc. Microchip Technology Inc.
|