| PART |
Description |
Maker |
| EP910LC-30N EP610 |
Classic Erasable Programmable Logic Device Family
IC CPLD 24MACROCELL 450GATE 30NS LE 5V 44 pin PLCC
|
Altera Corporation
|
| ATV750B ATV750B-10DM_883 ATV750B-10JC ATV750B-10JI |
JOYSTICK SWITCH, 5A; Current, contact rating:5A; Angle:12(degree); Centres, fixing:36mm; Contact style:double throw; Series:1000; Termination method:Solder Tab; Voltage, contact AC:250V RoHS Compliant: Yes
Paper, 25 meter roll, 58mm wide, front feed (FTP-622, 624, 627, 628, 629) UV PLD, 15 ns, CDIP24
Paper, 25 meter roll, 80mm wide, front feed (FTP-632, 634, 637, 638, 639) UV PLD, 15 ns, CQCC28
High-Speed UV-Erasable Programmable Logic Device OT PLD, 7.5 ns, PDIP24
Paper, 12 meter roll, 58mm wide (FTP-628WSL) OT PLD, 10 ns, PDSO24
High-Speed UV-Erasable Programmable Logic Device OT PLD, 25 ns, PDSO24
High-speed UV-erasable programmable logic device,83MHz
High-speed UV-erasable programmable logic device,58MHz
High-speed UV-erasable programmable logic device,92MHz
|
http://
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| PEEL16V8J-15 PEEL16V8J-25 PEEL16V8P-15 PEEL16V8P-2 |
PEEL?V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL??V8 -15/-25 CMOS Programmable Electrically Erasable Logic
PEEL⑩6V8 -15/-25 CMOS Programmable Electrically Erasable Logic
|
List of Unclassifed Manufacturers
ETC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| HN462732 |
4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY
4096 word x 8 Bit UV Erasable and EPROM
|
Hitachi Semiconductor
|
| HN462716 HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
2048 word x 8 Bit UV Erasable and EPROM
|
HITACHI[Hitachi Semiconductor]
|
| TC58257AP |
(TC58257AP/AF) Erasable and Programmable ROM
|
Toshiba
|
| HN58X2516TIE |
Electrically Erasable and Programmable Read Only Memory
|
http://
|
| HN27128AG-17 |
16384-word x 8-Bit UV Erasable Programmable ROM
|
Hitachi Semiconductor
|
| AT25080B-XHL-B AT25080B-SSHL-B AT25080B-SSHL-T AT2 |
serial electrically-erasable programmable read-only memory
|
ATMEL Corporation
|
| ATV5000L-35KC ATV5000L-35UC ATV5000L-35UM ATV5000- |
High Density UV Erasable Programmable Logic Device
|
ATMEL[ATMEL Corporation]
|
| PEEL22LV10AZP-35 PEEL22LV10AZS-35 PEEL22LV10AZSI-2 |
CMOS Programmable Electrically Erasable Logic Device 的CMOS电可擦除可编程逻辑器件
|
Electronic Theatre Controls, Inc.
|
