| PART |
Description |
Maker |
| NAND512W3A2C NAND512R4A2C |
(NAND512xxA2C) NAND Flash Memories
|
STMicroelectronics
|
| AM29DL642G70MDI AM29DL642G90MDI AM29DL642G90I |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo
|
Advanced Micro Devices, Inc.
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON
http://
Samsung semiconductor
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
| LPC3230FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, LCD controller 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
| TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
| K9NBG08U5M |
NAND Flash Memory
|
Samsung
|
