PART |
Description |
Maker |
MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
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OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation Vanguard International Semiconductor, Corp.
|
GLT5640AL16 GLT5640AL16-10TC GLT5640AL16-5.5TC GLT |
4M X 16 CMOS Synchronous Dynamic RAM
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ETC[ETC]
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VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36 |
CMOS Synchronous Dynamic RAM
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VML[Vanguard International Semiconductor]
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VG3617161BT VG3617161BT-7 VG3617161BT-8 VG3617161B |
16Mb CMOS Synchronous Dynamic RAM
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List of Unclassifed Manufac...
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VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MB81F643242B-10FN-X |
MEMORY CMOS 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
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Fujitsu Component Limited.
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MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
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OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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MD56V62160H MD56V62160 |
4-Bank x 1048576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
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OKI electronic components OKI[OKI electronic componets]
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