| PART |
Description |
Maker |
| 1SS302 |
Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
|
TY Semiconductor Co., Ltd
|
| 1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
Ultra High Speed Switching Application
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| 1SS300 |
Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
|
TY Semiconductor Co., Ltd
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| 629105150921 |
WR-COM - MICRO USB 2.0 TYPE AB - HORIZONTAL - SMT
|
Wurth Elektronik GmbH &...
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| R0605300L |
Si Reverse, low current, 5 - 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| R3005300L |
Si Reverse, low current, 5 - 300MHz, 30.0dB typ. Gain @ 300MHz, 160mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R2005350L |
Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R2005300L |
Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
