PART |
Description |
Maker |
FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
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Cooper Bussmann, Inc.
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BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
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TE Connectivity, Ltd. Glenair, Inc.
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2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
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Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
|
2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 16A条(丁) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|62AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 20A条(丁) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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Sanyo Electric Co., Ltd.
|
STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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STMicroelectronics
|
DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管,3OW2V - 175兆赫 RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管,30瓦,12V的,2 -175兆赫 RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
|
Hubbell Wiring Device-Kellems TE Connectivity, Ltd. Tyco Electronics
|
IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | CHIP TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 100V的五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 200伏五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 400V五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 100V的五(巴西)决策支持系统|芯片 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 200伏五(巴西)决策支持系统|芯片
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ITT, Corp. Amphenol, Corp. ZETTLER electronics GmbH Electronic Theatre Controls, Inc.
|
HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE (289.19 k) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes T-PNP-SI-AF PO- .75W T-NPN- SI-PO & SW-PD 40 W 或非 MOSFET-PWR N-CH HI SPEED 或非 MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非 MOSFET-PWR 800V 4A 或非 NOR GATE 或非 MOSFET-PWR 500V 8A
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ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
IRHN250 IRHN450 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|贴片
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Black Box, Corp.
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