| PART |
Description |
Maker |
| ISL6622 ISL6622CRZ-T ISL6622CBZ |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R
|
Intersil Corporation
|
| ISL6622B ISL6622BIRZ ISL6622BIBZ ISL6622BCBZ-T ISL |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 8-SOIC T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO8
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
| EDI7F2331MV100BNC EDI7F2331MV150BNC |
Dual 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R EEPROM
|
Bourns, Inc.
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| NTD20P06L-1G |
Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK 15.5 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| NTJD4105CT1G |
Small Signal MOSFET 20 V / −8.0 V, Complementary, 0.63 A / −0.775 A, SC−88 630 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
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