| PART |
Description |
Maker |
| SML10SIC06YC |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC06Y |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| STPSC1206 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| C3D10170H |
Silicon Carbide Schottky Diode 1700-Volt Schottky Rectifier
|
Cree, Inc
|
| APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| CSD20060D |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SDB06S6005 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
|
