PART |
Description |
Maker |
IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
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ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
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50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
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CERAMATE TECHNOLOGY CO., LTD.
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IDT70T653MS10BCI IDT70T653MS12BC 70T653MS15BC8 IDT |
512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256 512K X 36 DUAL-PORT SRAM, 10 ns, PBGA256 HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
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Integrated Device Techn... INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc.
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IS61LV5128AL IS61LV5128AL-10BI IS61LV5128AL-10BLI |
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc]
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LY61L5128LL-15LLI LY61L5128LL-15LLE |
512K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
IS61LV5128AL-10T-TR IS61LV5128AL-12TI IS61LV5128AL |
512K x 8 HIGH-SPEED CMOS STATIC RAM
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
EDI8M4512C |
512K X 4 SRAM CMOS HIGH SPEED MODULE
|
ETC[ETC]
|
29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125 ; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8,统一座低电压单电源闪 CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8,统一座低电压单电源闪 CAP RF 27PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 24PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 22PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 High Speed High Drive Precision Dual Operational Amplifier 8-SOIC CAP RF 1.0PF 250V 0603 SMD Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70 Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 512K X 8 FLASH 3V PROM, 150 ns, PQCC32 512K X 8 FLASH 3V PROM, 200 ns, PDSO32 512K X 8 FLASH 3V PROM, 120 ns, PQCC32
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意法半导 STMicroelectronics N.V.
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BH62UV4000HIG55 BH62UV4000STI55 BH62UV4000DIG55 BH |
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
|
Brilliance Semiconductor
|
IS61LV51216 IS64LV51216 |
(IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
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Integrated Silicon Solution
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