| PART |
Description |
Maker |
| AN1226 |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
|
SGS Thomson Microelectronics
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| VCO-108TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| SUD50N06-07L-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4413ADYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| MR18R1628GEG0 |
Key Timing Parameters
|
Samsung semiconductor
|
| SI4496DY-RC SI4496DY |
R - C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
| RLDH980-70-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI7136DP-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
