| PART |
Description |
Maker |
| AN1636 |
UNDERSTANDING AND MINIMISING ADC CONVERSION ERRORS
|
STMicroelectronics
|
| AN1001 |
CHOICE OF SERIAL EEPROMS REQUIRES UNDERSTANDING OF BUS DIFFERENCES
|
SGS Thomson Microelectronics
|
| MS6863TGTR MS6863TGU MS6863 |
DUAL 2W POWER AMPLIFIERS / STEREO HEADPHONE LOW VOLTAGE, POP NOISE FREE FUN
|
MOSA[MOSA ELECTRONICS]
|
| STM32-PRIMER STM3210B-PRIMER STM3210E-PRIMER |
Raisonance STM32 Primers for fun, easy evaluation and development with STM32
|
STMicroelectronics
|
| STM3210B-PRIMER |
Raisonance STM32 Primer for fun, easy evaluation and development with STM32(STM32F10XXX系列开发工具，包括Raisonance开发软
|
意法半导
|
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|
