| PART |
Description |
Maker |
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
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http://
ADPOW[Advanced Power Technology]
|
| AD7665ASTRL |
16-Bit/ 570 kSPS CMOS ADC
TV 8C 8#20 PIN PLUG 16位，570 kSPS的的CMOS模数转换
|
Analog Devices, Inc.
|
| AD7664AST AD7664ASTRL EVAL-AD7664CB EVAL-CONTROLBO |
Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:13-4
16-Bit/ 570 kSPS CMOS ADC
16-Bit 570 kSPS CMOS ADC
Evaluation Board AD766X/AD767X
16-Bit, 570 kSPS CMOS ADC
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Analog Devices, Inc.
AD[Analog Devices]
|
| STP22NF03L07 STP22NF03L |
N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET
N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| B39571-B3826-H310 B3826 |
1 FUNCTIONS, 570 MHz, SAW FILTER
SAW Components Low-loss Filter 570,00 MHz
|
EPCOS AG
EPCOS[EPCOS]
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| LT1376HVCSTR LT1376CSTRPBF LT1376HVCSPBF LT1375IS8 |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 3 A SWITCHING REGULATOR, 570 kHz SWITCHING FREQ-MAX, PDSO16
500kHz and 1MHz High Efficiency 1.5A Switching Regulators; Package: SO; No of Pins: 8; Temperature Range: -40?°C to 85?°C 3 A SWITCHING REGULATOR, 570 kHz SWITCHING FREQ-MAX, PDSO8
3 A SWITCHING REGULATOR, 570 kHz SWITCHING FREQ-MAX, PDIP8
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IG |
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技
From old datasheet system
HighSpeed 2-Technology
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
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INFINEON[Infineon Technologies AG]
|
| 0358170270 035817-0270 |
14.50mm (.570) Pitch MP-Lock Housing, 2 Circuits
14.50mm (.570) Pitch MP-Lock?/a> Housing, 2 Circuits
14.50mm (.570") Pitch MP-Lock垄芒 Housing, 2 Circuits
MOLEX Connector
|
Molex Electronics Ltd.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
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