| PART |
Description |
Maker |
| IR25XB02H IR25XB04H IR25XB06H IR25XB08H |
25.0 Amps Single Phase Full Wave 二十五点?安培单相全
600V Bridge in a IR25XB package
200V Bridge in a IR25XB package
800V Bridge in a IR25XB package
400V Bridge in a IR25XB package
|
International Rectifier, Corp.
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 8GBU12 8GBU 8GBU005 8GBU01 8GBU02 8GBU04 8GBU06 8G |
200V Bridge in a GBU package
8.0 Amps Single Phase Full Wave 八点?安培单相全
50V Bridge in a GBU package
100V Bridge in a GBU package
600V Bridge in a GBU package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| M25PE40VMP6TP |
2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; 4兆位，低电压，页式可擦除的字节变性，50MHz的SPI总线，标准引脚串行闪
|
STMicroelectronics N.V.
|
| M366S6453CTS-L1L/C1L M366S6453CTS-L7A/C7A M366S645 |
PC133/PC100 Unbuffered DIMM
2A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; PC133/PC100无缓冲DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
| BYP35A0506 BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A |
35 A, 300 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 50 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 100 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 600 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 200 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
35 A, 400 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1
Silicon Press-Fit-Diodes
|
Semikron International
|
| MK2761ASTR MK2761A MK2761AS MK2761ASLF MK2761ASLFT |
Package Outline and Package Dimensions (16-pin SOIC, 150 Mil. Narrow Body)
|
ICST[Integrated Circuit Systems]
|
| PL00130-WCG10-14 |
SMD LED 0603 Package Top View
Flat lens thin package 1.6 x 0.8 x 0.8mm
|
P-tec Corporation
|
| AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging
600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging
600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging
600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
|
Duracell
TT electronics Semelab, Ltd.
NXP Semiconductors N.V.
|
