| PART |
Description |
Maker |
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| HY514370SLTC70 HY514370JC80 HY514370SLRC80 HY51437 |
x16 Fast Page Mode DRAM
|
|
| HYB514171BJL-60 HYB514171BJL-70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SIEMENS AG
|
| UPD424170LLE-A80 UPD424170LLE-A10 UPD424170LLE-A70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
TE Connectivity, Ltd.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| NN5116165ALRR-60 NN5116165ALTT-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Bourns, Inc.
|
| IBM0118165J3-70 IBM0118165PT3-6R IBM0118165BT3-6R |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
International Business Machines, Corp.
|
| NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| MSM514256C MSM514256CL MSM514256C-70RS |
DRAM / FAST PAGE MODE TYPE
From old datasheet system
262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
