| PART |
Description |
Maker |
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| HY5DU56422BT-D4 HY5DU56422BT-D43 HY5DU56422BT-J HY |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
DDR SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
|
| HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66
256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4D553235F-GC33 K4D553235F-GC K4D553235F-GC25 K4D5 |
256M GDDR SDRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU561622CTP |
256M gDDR SDRAM
|
Hynix
|
| M2V56S20AKT M2V56S20AKT-5 M2V56S20AKT-6 M2V56S20AK |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EDS2516AFTA-75-E EDS2516AFTA-6B-E |
256M bits SDRAM
|
Elpida Memory, Inc.
|
| EDS2732CABJ EDS2732CABJ-1A-E EDS2732CABJ-1AL-E EDS |
256M bits SDRAM
|
http://
Elpida Memory
|
| EDD2516ARTA-6B |
256M bits DDR SDRAM
|
Elpida Memory
|
| MT48LC16LFFG MT48H16M16LFBG MT48V16MLFFG |
(MT48xx16x16LFxG) 256M x 16 Mobile SDRAM
|
Micron Technology
|
