| PART |
Description |
Maker |
| 2SC2011 |
(2SCxxxx) TRANSISTORS TO 92L TO-92LS MRT
|
Rohm
|
| HCT7000MTXV HCT7000 HCT7000M HCT7000MTX |
N- Channel En hance ment Mode MOS Transistor
N- Channel Enhancement Mode MOS Transis tor
|
List of Unclassifed Manufacturers
ETC[ETC]
OPTEK Technologies
|
| MAX1745 MAX1745AUB MAX1745EUB MAX1744 MAX1744EUB M |
High-Voltage, Step-Down DC-DC Controller in uMAX
High-Voltage, Step-Down DC-DC Controller in レMAX
High-Voltage, Step-Down DC-DC Controller in ??AX
High-Voltage Step-Down DC-DC Controller in MAX
Replaced by TMS320C6410 : Digital Signal Processor 40-PDIP 0 to 70
High-Voltage, Step-Down DC-DC Controller in MAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in µMAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10
High-Voltage, Step-Down DC-DC Controller in MAX 高压、降压型DC-DC控制器，µMAX封装
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| 2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4635LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/20mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| MSK610 MSK610-15 MSK610B |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
Ultra Low Quiescent Current - ±12mA for High Voltage Stage
|
Anaren Microwave
M.S. Kennedy Corporatio...
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
|
SANYO
|
