PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V2228 |
12.2-12.8 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFK35V4045 |
14.0-14.5 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC38V6472 |
6.4-7.2 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC45V5964A_04 MGFC45V5964A MGFC45V5964A04 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
JM38510 AD532J AD532JCHIP AD532JD AD532JH AD532K A |
Internally Trimmed Integrated Circuit Multiplier 16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 IC-MONOLITHIC MULTIPIER Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14 Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
|
AD[Analog Devices] Analog Devices, Inc.
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|