| PART |
Description |
Maker |
| IXTQ44N50P |
Polar N-channel MOSFETs
|
IXYS Corporation
|
| IXFA10N60P |
Polar MOSFETs
|
IXYS Corporation
|
| 106BPS063M |
Radial lead BI-POLAR / NON-POLAR
|
Illinois Capacitor, Inc...
|
| IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范，以.1A的，80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation]
Harris Semiconductor
Harris, Corp.
|
| IRFD213 IRFD210 IRFD211 IRFD212 |
(IRFD210 - IRFD213) N Channel Power MOSFETs
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS
|
Harris Semiconductor
Harris Corporation
|
| IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630- |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS
9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS
9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条，00V.4з的N通道功率MOSFET
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
