PART |
Description |
Maker |
TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
AWT6235RM20P8 |
WiBro 3.4V/25.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
AWT6275 AWT6275RM20P8 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
AWT613608 AWT6136RM5P8 AWT6136RM5P9 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
AWT6275 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 帮助膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM7179-60SL |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State GESS[GE Solid State] ETC
|