PART |
Description |
Maker |
HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) 256M超过16057型快闪记忆体部门71299072位) 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
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Hitachi,Ltd. Hitachi Semiconductor
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K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC SSR H/S ZS 600V 70A 4-32VDC 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存 ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存 DSUB 25 M PCR/A G
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
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STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
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K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M |
256M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
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S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
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W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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SAMSUNG
|
ULQ2436M 2436 |
COUNTDOWN POWER TIMER COUNTDOWNPOWERTIMER Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes Audio Sample Rate Converter IC; IC Function:Audio Sample Rate Converter IC; Package/Case:28-SOIC; Leaded Process Compatible:No; No. of Channels:2; Operating Temp. Max:85 C; Operating Temp. Min:-40 C RoHS Compliant: Yes 的CountDown电源定时
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ALLEGRO[Allegro MicroSystems] AllegroMicroSystems Allegro MicroSystems, Inc.
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W25Q257FVFIG W25Q257FVFIQ W25Q257FVEIF-TR |
3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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