| PART |
Description |
Maker |
| R76QD1100SE40J |
Capacitor, film, 1000 pF, /-5% Tol, -55/ 105C, General Purpose, 1000 VDC@85C, Lead Spacing=7.5 mm
|
Kemet Corporation
|
| PME261JA4100KR19T0 |
PME261/P561, Film, Metallized Paper, General Purpose, 1000 pF, 10%, 1000 VDC, 85C, Lead Spacing = 10.2mm
|
Kemet Corporation
|
| C0603V102KDRACTU |
Capacitor, Ceramic, SMD, MLCC, Arcshield, High Voltage, Temp Stable, 1000 pF, /-10% Tol, 1000 V, X7R, 0603 (1608 metric)
|
Kemet Corporation
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| DBTC-12-4 DBTC-12-4L DBTC-12-44L |
Surface Mount Directional Couplers 50蟹 5 to 1000 MHz
Surface Mount Directional Couplers 50з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.6 dB INSERTION LOSS-MAX
Surface Mount Directional Couplers 50 5 to 1000 MHz
Surface Mount Directional Couplers 50?/a> 5 to 1000 MHz
|
Mini-Circuits
|
| CKR05BX102KRV |
Ceramic, Military/High Reliability, MIL-39014, 1000 pF, 10%, 200 V, BX, R (0.01%/1000 Hrs), Lead Spacing = 5.08mm
|
Kemet Corporation
|
| SPD5614 SPD56142 SPD5622SM SPD5618 SPD5618SMS R000 |
1 AMP 200 Α 1000 VOLTS STANDARD RECOVERY RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
1 AMP 200 ? 1000 VOLTS STANDARD RECOVERY RECTIFIER
|
http://
Solid State Devices, Inc.
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| DB207S DB206S DB205S DB201S DB202S DB203S DB204S D |
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
|
RECTRON LTD
Rectron Semiconductor
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BCM5700 |
PCI - X 10/100/1000 BASE -T CONTROLLER 的PCI - 10/100/1000 Base - T型控制器
|
Electronic Theatre Controls, Inc.
ETC
|
|
