| PART |
Description |
Maker |
| CHA5051-QDG |
7-16GHz Medium Power Amplifier
|
United Monolithic Semiconductors
|
| CHA5052-QGG |
7-16GHz High Power Amplifier
|
United Monolithic Semiconductors
|
| CHA3666-SNF |
5.8-16GHz Low Noise Amplifier
|
United Monolithic Semiconductors
|
| FMA3011 |
12.7-16GHZ MMIC POWER AMPLIFIER
|
Filtronic Compound Semiconductors
|
| S1724BBBA S1724BDBA S1724CBBA S1724CDBA S1724DDBA |
Optical amplifier platform, erbium-doped fiber amplifier. P0=16.0 dBm. Connector FC/PC. Without heat sink.
Optical Amplifier Platform1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform/1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(S and V Series) 光放大器平台,1724 -型Eribium铒光纤放大器（S和V系列
BOARD INTERFACE KGZ/GMS 0-25%
Optical amplifier platform, erbium-doped fiber amplifier. P0=13.0 dBm. Connector FC/PC. Without heat sink.
|
AGERE[Agere Systems]
ERICSSON
Austin Semiconductor, Inc
|
| 2SC5317FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)
|
TOSHIBA
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MGA-81563 |
0.1-6 GHz 3 V, 14 dBm Amplifier(0.1-6 GHz 3 V, 14 dBm 放大
|
Agilent(Hewlett-Packard)
|
| TA165-182-32-32 |
16.5 - 18.2 GHz 32 dBm Amplifier
|
Transcom, Inc.
|
| TA021-035-32-15 |
2.1 - 3.5 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TA050-062-45-27 |
5 - 6.2 GHz 27.5 dBm Amplifier
|
Transcom, Inc.
|
| TA085-110-30-38 |
8.5 - 11 GHz 38 dBm Amplifier
|
Transcom, Inc.
|
