| PART |
Description |
Maker |
| 1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4
Diode Zener Single 25V 5% 10W 2-Pin DO-4
Diode Zener Single 9.1V 5% 10W 2-Pin DO-4
Diode Zener Single 30V 5% 10W 2-Pin DO-4
Diode Zener Single 16V 5% 10W 2-Pin DO-4
Diode Zener Single 7.5V 5% 10W 2-Pin DO-4
Diode Zener Single 24V 5% 10W 2-Pin DO-4
Diode Zener Single 175V 20% 10W 2-Pin DO-4
Diode Zener Single 50V 5% 10W 2-Pin DO-4
Diode Zener Single 43V 5% 10W 2-Pin DO-4
Diode Zener Single 56V 5% 10W 2-Pin DO-4
Diode Zener Single 13V 5% 10W 2-Pin DO-4
Diode Zener Single 8.2V 5% 10W 2-Pin DO-4
Diode Zener Single 15V 5% 10W 2-Pin DO-4
Diode Zener Single 27V 5% 10W 2-Pin DO-4
Diode Zener Single 18V 5% 10W 2-Pin DO-4
Diode Zener Single 105V 5% 10W 2-Pin DO-4
Diode Zener Single 52V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 5% 10W 2-Pin DO-4
Diode Zener Single 51V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
| MGFS48V2527_04 MGFS48V2527 MGFS48V252704 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V4450A |
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V5258_04 MGFC40V5258 MGFC40V525804 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| REC10-2415DRWL REC10-6812DRWL REC10-6812DRWLZ REC1 |
10W DC/DC converter with 9V input, 15/670mA output
10W DC/DC converter with 9V input, 5/2000mA output
10W DC/DC converter with 69V input, -12/ -416mA output
10W DC/DC converter with 69V input, 5/2000mA output
10W DC/DC converter with 69V input, 15/670mA output
10W DC/DC converter with 69V input, -5/ -1000mA output
ECONOLINE - DC/DC - CONVERTER
10W DC/DC converter with 68V input, -12/ -416mA output
10W DC/DC converter with 69V input, -15/ -333mA output
10W DC/DC converter with 69V input, 24/416mA output
10W DC/DC converter with 10V input, 5/2000mA output
10W DC/DC converter with 9V input, 12/830mA output
|
Recom International Power
|
| NTE7105 |
Integrated Circuit Dual 10W 10W Stereo Amplifier
|
NTE Electronics
|
