| PART |
Description |
Maker |
| TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
http://
|
| TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
| TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32
JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32
Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
|
