| PART |
Description |
Maker |
| P89LPC9103FTK P89LPC9107FDH |
P89LPC9102/9103/9107; 8-bit microcontrollers with accelerated two-clock 80C51 core 1 kB 3 V byte-erasable Flash with 8-bit A/D converter
|
Philips
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| W25X10L W25X20L W25X10LSNEG W25X80L W25X80LZPEG W2 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X40A W25X40AVZPIG W25X20A |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X10AL W25X10ALDAIG W25X10ALDAIZ W25X10ALSNIG W2 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
Toshiba Semiconductor
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MR53V3252J-XXTP MR53V3252J MR53V3252J-XXMA |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|
| LD87C51FB-1 TP80C51FA N80C51FA-24 LN80C51FA-1 D83C |
8-BIT, MROM, 33 MHz, MICROCONTROLLER, CDIP40
8-BIT, 16 MHz, MICROCONTROLLER, PQCC44
8-BIT, 24 MHz, MICROCONTROLLER, PQCC44
EVENT-CONTROL CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER 8-BIT, 12 MHz, MICROCONTROLLER, PDIP40
8-Bit MCU: CISC: EPROM: MCS51 Family
|
INTEL CORP
Intel, Corp.
|
