PART |
Description |
Maker |
TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F |
WORD-WIDE FlashFile MEMORY FAMILY
|
INTEL[Intel Corporation]
|
28F008S5 28F016S5 |
16-MBIT 5V FlashFile Memory(16MV闪速存储器) 8-MBIT 5 VOLT FlashFile Memory(8MV闪速存储器) 8兆位5伏FlashFile内存00万位5V的闪速存储器
|
Intel Corp. Intel, Corp.
|
28F008S3 28F004S3 28F016S3 29059805 |
3 Volt FlashFile Memory From old datasheet system
|
Intel
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation
|
M5M5W817KT-70HI |
Memory>Low Power SRAM 8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|