PART |
Description |
Maker |
CR8AM |
MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
CR6CM CR6CM-8 |
CR6CM-8 CR6CM-12 Datasheet 104K/MAR.20.03 CR6CM - 8 CR6CM - 12数据104K/MAR.20.03 MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
AN80T05 |
Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
|
Panasonic Semiconductor
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
BA6664FM |
Semiconductor IC
|
Rohm CO.,LTD.
|
KIC3213MF13 KIC3213MF14 KIC3213MF17 KIC3213MF15 KI |
SEMICONDUCTOR
|
KEC(Korea Electronics)
|