PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
HVD400C |
2.145 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVU350B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVL355CM |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVL385CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC374B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
HVD369B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVL396CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVL381CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD350B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC379B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|