| PART |
Description |
Maker |
| AT-51-12.480MHZ-CL AT-51-48.540MHZ-3OT-SR AT-51-48 |
QUARTZ CRYSTAL RESONATOR, 12.48 MHz
QUARTZ CRYSTAL RESONATOR, 48.54 MHz
QUARTZ CRYSTAL RESONATOR, 48.64 MHz
QUARTZ CRYSTAL RESONATOR, 48.384 MHz
QUARTZ CRYSTAL RESONATOR, 20.48 MHz
QUARTZ CRYSTAL RESONATOR, 48 MHz
QUARTZ CRYSTAL RESONATOR, 33.34 MHz
QUARTZ CRYSTAL RESONATOR, 34 MHz
QUARTZ CRYSTAL RESONATOR, 34.368 MHz
QUARTZ CRYSTAL RESONATOR, 34.54 MHz
QUARTZ CRYSTAL RESONATOR, 34.5744 MHz
QUARTZ CRYSTAL RESONATOR, 34.2 MHz
QUARTZ CRYSTAL RESONATOR, 26.6 MHz
QUARTZ CRYSTAL RESONATOR, 45.6 MHz
QUARTZ CRYSTAL RESONATOR, 26.412 MHz
QUARTZ CRYSTAL RESONATOR, 26.8 MHz
QUARTZ CRYSTAL RESONATOR, 56 MHz
QUARTZ CRYSTAL RESONATOR, 66.6667 MHz
QUARTZ CRYSTAL RESONATOR, 46.2 MHz
QUARTZ CRYSTAL RESONATOR, 27.145 MHz
QUARTZ CRYSTAL RESONATOR, 49.381 MHz
QUARTZ CRYSTAL RESONATOR, 49.5 MHz
QUARTZ CRYSTAL RESONATOR, 49.8 MHz
QUARTZ CRYSTAL RESONATOR, 49.83 MHz
QUARTZ CRYSTAL RESONATOR, 53.693175 MHz
QUARTZ CRYSTAL RESONATOR, 32.768 MHz
QUARTZ CRYSTAL RESONATOR, 14.3728 MHz
QUARTZ CRYSTAL RESONATOR, 38.912 MHz
QUARTZ CRYSTAL RESONATOR, 21.6 MHz
QUARTZ CRYSTAL RESONATOR, 7.352 MHz
QUARTZ CRYSTAL RESONATOR, 10.002 MHz
QUARTZ CRYSTAL RESONATOR, 11.2896 MHz
QUARTZ CRYSTAL RESONATOR, 15.6433 MHz
QUARTZ CRYSTAL RESONATOR, 40.5 MHz
QUARTZ CRYSTAL RESONATOR, 58.25 MHz
QUARTZ CRYSTAL RESONATOR, 8.3935 MHz
QUARTZ CRYSTAL RESONATOR, 8 MHz
QUARTZ CRYSTAL RESONATOR, 13.2256 MHz
QUARTZ CRYSTAL RESONATOR, 4.5511 MHz
QUARTZ CRYSTAL RESONATOR, 35.557 MHz
QUARTZ CRYSTAL RESONATOR, 15.5567 MHz
QUARTZ CRYSTAL RESONATOR, 39.75 MHz
QUARTZ CRYSTAL RESONATOR, 41.539 MHz
QUARTZ CRYSTAL RESONATOR, 15.8 MHz
QUARTZ CRYSTAL RESONATOR, 32.8 MHz
QUARTZ CRYSTAL RESONATOR, 20.4066 MHz
QUARTZ CRYSTAL RESONATOR, 12.352 MHz
QUARTZ CRYSTAL RESONATOR, 20.4 MHz
QUARTZ CRYSTAL RESONATOR, 50.35 MHz
QUARTZ CRYSTAL RESONATOR, 21.12 MHz
QUARTZ CRYSTAL RESONATOR, 44.4 MHz
QUARTZ CRYSTAL RESONATOR, 9.924 MHz
QUARTZ CRYSTAL RESONATOR, 39.82 MHz
|
Nihon Dempa Kogyo Co., Ltd.
NIHON DEMPA KOGYO CO LTD
|
| TC624EPA TC622VOA TC624COA TC622EAT TC622EOA TC622 |
Low Cost Single Trip Point Temperature Sensor
Low Cost Single Trip Point Temperature Sensor 低成本的单跳变点温度传感
FOOT SWITCH 230VAC 3AMP OPTIONS 低成本的单跳变点温度传感
(TC622 / TC624) Low Cost Single Trip Point Temperature Sensor
The TC622 and TC624 are programmable solid state temperature sensors designed to replace mechanical switches in sensing and control applications. Both devices integrate the temperature sensor with a voltage reference and all required detec
|
TelCom Semiconductor, Inc.
MICROCHIP[Microchip Technology]
|
| LT104V3-100 LT104V3-100-01 |
THE COLOR ACTIVE MATRIX TFT (THIN FILM TRANSISTOR) LIQUID CRYSTAL DISPLAY USING AMORPHOUS SILICON TFTS AS SWITCHING DEVICES
|
Samsung Electronic
Samsung semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| MICROSMD005F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TRF600-150-B-0.5 TRF600-150-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| MICROSMD110F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
