PART |
Description |
Maker |
CY14V104NA-BA25XIT CY14V104LA-BA25XI CY14V104LA-BA |
4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times
|
http:// Cypress Semiconductor
|
PYX28HC64-12L32MB PYX28HC64-70CWMB PYX28HC64-70L32 |
Access Times of 70, 90, and 120ns Software Data Protection
|
Pyramid Semiconductor C...
|
PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
MCM6729CWJ7R MCM6729C MCM6729CWJ6 MCM6729CWJ6R MCM |
256K x 4 Bit Fast Static Random Access Memory
|
MOTOROLA[Motorola, Inc]
|
MCM6728BWJ8R MCM6728B MCM6728BWJ10 MCM6728BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
ACE8001MT8 ACE8001M8 ACE8001EMT8X ACE8001EMT8 ACE8 |
Arithmetic Controller Engine (ACEx) for Low Power Fast Access Applications Fixed Reset
|
Fairchild Semiconductor
|
SI510-11 SI511 |
2 to 4 week lead times
|
Silicon Laboratories
|
TLGE33CPF TLFGE33CPF TLPYE33CPF TLOE33CPF |
LED Lamp 5×2.5 arched
|
TOSHIBA
|
IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器(单存取RAM⑩) HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM Integrated Device Technology, Inc.
|
MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
1203-16-9 |
FOR USE TIMES M-2831 & FEP 226 CABLE
|
Winchester Electronics Corp...
|