| PART |
Description |
Maker |
| HY27UA081G1M HY27SA161G1M HY27SA081G1M |
NAND Flash - 1Gb
|
Hynix Semiconductor
|
| MT29F1G08ABB MT29F1G16ABB |
(MT29F1GxxABB) 1Gb NAND Flash Memory
|
Micron Technology
|
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive
NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
| K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9 |
DSUB
DBM25PK
1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表
Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TS1GMP630 TS2GMP630 TS4GMP630 |
1GB/2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| HY27UF082G2A HY27UF162G2A HY27UF082G2A-TCB HY27UF0 |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
256M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| HFDOM40KVXXX DOM40KV032 DOM40KV016 DOM40KV064 DOM4 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating
40Pin Flash Disk Module Min.8MB - Max.1GB True IDE Interface Mode 3.3V / 5.0V Operating
|
HANBIT[Hanbit Electronics Co.,Ltd]
HANBiT Electronics Co., Ltd.
|
