PART |
Description |
Maker |
BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
CM421655 CM421255 |
SCR/Diode POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts SCR/Diode POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
CM431690 CM431290 |
Dual SCR POW-R-BLOK?Modules 90 Amperes/1200-1600 Volts Dual SCR POW-R-BLOK?/a> Modules 90 Amperes/1200-1600 Volts Dual SCR POW-R-BLOK⑩ Modules 90 Amperes/1200-1600 Volts Dual SCR POW-R-BLOK Modules 90 Amperes/1200-1600 Volts Dual SCR POW-R-BLOKModules 90 Amperes/1200-1600 Volts 140 A, 1200 V, SCR
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
ND410626 ND410826 ND411026 ND411426 ND411626 ND411 |
POW-R-BLOK Dual Diode Isolated Module (260 Amperes / Up to 2000 Volts) 260 A, 800 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
XP1048-QJ |
3.3-3.8 GHz HFET 3W Linear Power Amplifier
|
Mimix Broadband
|
MAAP-007899-TR3000 MAAP-007899 MAAP-007899-001SMB |
High Power Linear Amplifier 5.7 - 5.9 GHz
|
MACOM[Tyco Electronics]
|
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
RMPA5255 |
4.9 - 5.9 GHz WLAN Linear Power Amplifier Module
|
Fairchild Semiconductor
|
PB-CHV2721-QJ-00A0 CHV2721-QJ-0G00 CHV2721-QJ-0G0T |
3.3-3.6 GHz InGaP HBT 8W Linear Power Amplifier
|
Mimix Broadband
|