| PART |
Description |
Maker |
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 2DD2679 2DD2679-13 2DD2679-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| OM6502ST OM6501ST |
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
|
List of Unclassifed Manufacturers
ETC
|
| IRGPC50S |
600V Discrete IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| 2N3767SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
Seme LAB
|
| IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
|
Infineon Technologies AG
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| BFR380 BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz
|
Infineon Technologies AG
|
