| PART |
Description |
Maker |
| CF5015 CF5015AL2 CF5015AL1-2 CF5015AL2-2 |
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
|
Seiko NPC Corporation
|
| CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.0V Low Power CMOS slow SRAM
x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| HY62UF08401C HY62UF08401C-DSI HY62UF08401C-I HY62U |
Super Low Power Slow SRAM - 4Mb
High Speed, Super Low Power and 4Mbit Full CMOS SRAM
|
Hynix Semiconductor
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| CY7C1020CV26-15ZSXE CY7C1020CV26-15ZSXET |
512Kb (32K x 16) Static RAM
Async SRAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 2.5 to 2.7 V;
|
CYPRESS SEMICONDUCTOR CORP
|
| M68Z128W M68Z128W-70N1T M68Z128WN |
3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 3V的，1兆位的输128KB的x8低功耗SRAM启用
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| CY7C0430CV-133BGI |
10 Gb/s 3.3V QuadPort(TM) DSE Family; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.15 to 3.45 V; Speed: 133 MHz 64K X 18 FOUR-PORT SRAM, 4.2 ns, PBGA272
|
Crystek, Corp.
|
