| PART |
Description |
Maker |
| AM29DL320GB70WDF AM29DL320GB120 AM29DL320GT70PCFN |
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 对于新的设计，涉及TSOP封装，S29JL032H会取代Am29DL320G，是厂家推荐的迁移路径
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 2M X 16 FLASH 3V PROM, 70 ns, PBGA63
High Speed CMOS Logic Presettable Synchronous 4-Bit Binary Up/Down Counters 16-CDIP -55 to 125 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
DIODE SCHOTTKY SINGLE 10V 200mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-323 3K/REEL
DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
|
Advanced Micro Devices
SPANSION LLC
Spansion, Inc.
PROM
Spansion Inc.
|
| K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4 |
256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/ |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ZC2811E ZC2813E ZC2812E ZC2800E ZC5800E |
Schottky Diode-Not recommended for new designs
Dual Schottky Diode-Not recommended for new designs
|
Zetex Semiconductors
|
| ZXF103Q16 |
Variable Q Filter -Not recommended for new designs
|
Zetex Semiconductors
|
| PALCE610H-25JC PALCE610H-25PC PALCE600 PALCE610 PA |
USE GAL DEVICES FOR NEW DESIGNS EE PLD, 25 ns, PDIP24
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| AN504 |
Video Crosspoint Switch Simplifies Large Matrix Designs
|
http://
Vishay Siliconix
|
| LWM67C-T1U1-FK0KM0-24G6 |
Small size high-flux LED for slim designs
|
OSRAM GmbH
|
| MIC2507 MIC2507BM |
Quad Integrated High-Side Switch Not Recommended for New Designs
|
MICREL[Micrel Semiconductor]
|
