| PART |
Description |
Maker |
| AM29DL320GB70WDF AM29DL320GB120 AM29DL320GT70PCFN |
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 对于新的设计，涉及TSOP封装，S29JL032H会取代Am29DL320G，是厂家推荐的迁移路径
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 2M X 16 FLASH 3V PROM, 70 ns, PBGA63
High Speed CMOS Logic Presettable Synchronous 4-Bit Binary Up/Down Counters 16-CDIP -55 to 125 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
DIODE SCHOTTKY SINGLE 10V 200mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-323 3K/REEL
DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
|
Advanced Micro Devices
SPANSION LLC
Spansion, Inc.
PROM
Spansion Inc.
|
| AT52BR3244 |
32M bit Flash combined with a 4M bit/8 mbit SRAM. Not recommended for new designs. New designs shoul
From old datasheet system
|
Atmel Corp
|
| K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs)
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape
IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip＜LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;（不推荐用于新设计）
|
Ecliptek, Corp.
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CXK5T81000ATN/AYN-10LLX CXK5T81000ATN/AYN-12LLX CX |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
128K X 8 STANDARD SRAM, 100 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
131072-word x 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
SONY
|
| 28370-PBD-005-A-15 |
Upgrading Bt837x Designs
|
M/A-COM Technology Solu...
|
| M28V841-100N3RTR M28V841-150N3R M28V841-120N3RTR M |
1M X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
|
ST Microelectronics
|
| CBC-EVAL-05 CBC-EVAL-10 AN-1036 |
Using the EnerChip CC in Energy Harvesting Designs
|
Cymbet Corporation
|
| DP3ED8MX32RKY5-80C DP3D8MX32RKY5-80C DPD8MX32RKY5- |
8M X 32 EDO DRAM MODULE, 80 ns, QMA66 LEADLESS, STACK, TSOP-66
8M X 32 FAST PAGE DRAM MODULE, 80 ns, QMA66 LEADLESS, STACK, TSOP-66
|
Infineon Technologies AG
Twilight Technology, Inc.
|
| S29GL128M10TCIR12 S29GL128M10TBIR12 |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
|
Spansion, Inc.
|
