| PART |
Description |
Maker |
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLF178P |
Power LDMOS transistor 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5520379A |
3.2V Operation Silicon RF Power LDMOS FET
|
NEC
|
| LB401 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LX802 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| L2821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| L125 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LX723 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
