| PART |
Description |
Maker |
| PEB2447-HV1.2 |
MTSXL (Memory Time Switch Extended La...
|
Infineon
|
| FM20L08-60-TG |
1Mbit Bytewide FRAM Memory Extended Temp
|
Electronic Theatre Controls, Inc.
|
| P89C669BBD P89C669FA |
80C51 8-bit microcontroller family with extended memory 96 kB Flash with 2 kB RAM
|
NXP Semiconductors
|
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| XAPP876 |
Virtex-5 FPGA Interface to a JESD204A Compliant ADC
|
Xilinx, Inc
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| BR34E02FVT-3 |
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
|
Rohm
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
