| PART |
Description |
Maker |
| ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM
16 Kbit Serial I 2 C EEPROM with Extended Addressing
(ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing
CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes
16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM，带有扩展寻址
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| Q67100-H9020 SDE2526 Q67100-H3262 Q67100-H3261 SDE |
Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range 非易失性内与I2C总线接口与千位E2PROM的扩展温度范
OSC 5V SMT 7X5 CMOS PROGRM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with Extended Temperature Range(2-K位EEPROM(带IIC总线接口,扩展温度范围))
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| XC2V10000 XC2V2000 |
Virtex-II 1.5V Field-Programmable Gate Arrays(Virtex-II 1.5V 现场可编程门阵列) 的Virtex - II 1.5V的现场可编程门阵列（的Virtex - II 1.5V的现场可编程门阵列）
|
Xilinx, Inc.
|
| PEB2447 PEB2447H Q67103-H6594 |
Memory Time Switch Extended Large MTSXL
|
SIEMENS[Siemens Semiconductor Group]
|
| Q67103-H6594 |
Memory Time Switch Extended Large MTSXL
|
SIEMENS AG
|
| XQ2V6000-5EF957I XQ2V1000-EF957I XQ2V3000-EF957I X |
QPro Virtex-II 1.5V Platform FPGAs
|
Xilinx, Inc
|
| XC6VCX130T XC6VCX75T XC6VCX240T-1FFG1156C |
Virtex-6 CXT Family Data Sheet
|
Xilinx, Inc
|
| XAPP876 |
Virtex-5 FPGA Interface to a JESD204A Compliant ADC
|
Xilinx, Inc
|
| XCV200 XCV100 XCV600 DS003-1 XCV1000 XCV400 XCV800 |
Virtex 2.5 V Field Programmable Gate Arrays
Virtex?/a> 2.5 V Field Programmable Gate Arrays
Fast, high-density Field-Programmable Gate Arrays
|
Xilinx, Inc
http://
|
| BR34E02FVT-3 |
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
|
Rohm
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
