| PART |
Description |
Maker |
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
|
| FR301G FR307G FR302G FR303G FR304G FR305G FR306G F |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
1000 V, 3 A, glass passivated junction fast recovery rectifier
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| FR155G FR157G FR151G FR152G FR153G FR154G FR156G F |
1000 V, 1.5 A, glass passivated junction fast recovery rectifier
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
|
EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
|
| C4SMAFL60A C4SMAFL9.0A C4SMAFL90A C4SMAFL18A C4SMA |
SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS, 8.5 THRU 170 VOLTS
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS
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Central Semiconductor Corp
Central Semiconductor C...
|
| 5KP5.0 5KP14C 5KP48 5KP70 5KP120A 5KP90CA 5KP 5KP1 |
Optocoupler; Isolation Voltage:5300Vrms; Optocoupler Output Type:Transistor; Package/Case:6-DIP; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Voltage Rating:1.25V RoHS Compliant: Yes
GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR 玻璃钝化结TRANSIENTVOLTAGE抑制
GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR 玻璃钝化TRANSIENTVOLTAGE抑制
|
http://
TRSYS
FORMOSA[Formosa MS]
美丽微半导体有限公司
Formosa Microsemi Co., Ltd.
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
|
http://
WTE[Won-Top Electronics]
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
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STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| FE3A |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| T10B T10B035 T10B065 T10B120 T10B140 T10B200 T10B2 |
Glass passivated junction
|
LITTELFUSE[Littelfuse]
|
| 1N4934G 1N4937G 1N4935G |
GLASS PASSIVATED JUNCTION
|
Galaxy Semi-Conductor Holdings Limited
|
